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| SHINDENGEN Schottky Rectifiers (SBD) Dual S20SC9M 90V 20A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Small AE jc *oe High current capacity APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 Z * Operating Junction Temperature Tj 150 *Z V Maximum Reverse Voltage RM 90 V Repetitive Peak Surge V Pulse width 0.5ms, duty 1/40 Reverse Voltage RRSM 100 V Average Rectified Forward 50Hz sine wave, R-load, Rating for each diode Io/2, Tc IO Current 20 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj= 200 A Repetitive Peak Surge P Pulse width 10Es, Rating of per diode, Tj=25*Z Reverse Power RRSM 660 W Mounting Torque F TOR(Recommended torque* 0.5Nm) 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage V I=10A, Pulse measurement, Rating of per diode FF Max.0.75 V Reverse Current I V=V,M Pulse measurement, Rating of per diode R RR Max.10mA Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.370pF R =10V, Thermal Resistance AEjc junction to case Max.1.0 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S20SC9M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.5 1 1.5 2 2.5 Forward Voltage VF [V] S20SC9M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 1 10 100 Reverse Voltage VR [V] S20SC9M 10000 Reverse Current 1000 Tc=150C [MAX] Tc=150C [TYP] Reverse Current IR [mA] 100 Tc=125C [TYP] Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 20 40 60 80 100 Reverse Voltage VR [V] S20SC9M 100 Reverse Power Dissipation Reverse Power Dissipation PR [W] 80 DC D=0.05 0.1 0.2 60 0.3 40 0.5 20 SIN 0.8 0 0 20 40 60 80 100 120 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S20SC9M 30 Forward Power Dissipation Forward Power Dissipation PF [W] 25 0.5 D=0.8 SIN DC 20 0.2 0.1 15 0.05 0.3 10 5 0 0 5 10 15 20 25 30 35 Average Rectified Forward Current IO [A] Tj = 150C 0 IO tp D=tp /T T S20SC9M 40 Derating Curve Average Rectified Forward Current IO [A] 35 DC 30 25 0.5 20 SIN 0.3 D=0.8 15 0.2 10 5 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 45V 0 0 IO VR tp D=tp /T T S20SC9M 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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